InAs High-Electron Mobility Transistors on the Path to THz Operation
نویسندگان
چکیده
1. Introduction The invention of the High-Electron Mobility Transistor (HEMT) revolutionized the world of high-frequency electronics [1]. First on GaAs, then on InP and more recently on GaN, HEMTs have steadily achieved higher levels of performance in terms of high frequency gain, noise and power. Today, InAs HEMTs on InP exhibit the best balanced high-frequency response (high f T and high f max) of any transistor technology [2]. InAs HEMTs are uniquely poised to attain the first true THz transistor (both f T and f max >1 THz). This paper reviews the evolution of HEMTs along their path towards THz operation and discusses steps to be taken in order to attain this ultimate prize.
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